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Guerrilla RF Unveils New Gallium Nitride (GaN) Dice for High-Performance RF Applications

MWN-AI** Summary

Guerrilla RF, Inc. (OTCQX: GUER) has officially launched its new GaN on SiC HEMT power amplifiers, specifically the GRF0020D and GRF0030D. These innovative devices, designed for high-performance radio frequency (RF) applications, are capable of delivering up to 50W of saturated power, making them ideal for sectors such as wireless infrastructure, military, aerospace, and industrial heating. The GRF0030D operates efficiently on either 50V or 28V supply rails, achieving a maximum output of 50W from DC to 6GHz, with variable gain between 13.5dB and 23.7dB. The GRF0020D variant caters to slightly lower applications, providing 30W and 19W of saturated power for 50V and 28V operations, respectively, with operational frequencies reaching up to 7GHz.

Guerrilla RF emphasizes its commitment to domestic manufacturing, aligning with the goals of the CHIPS Act of 2022, which aims to fortify the U.S. semiconductor supply chain. With market research by Yole Group projecting that the RF GaN device market will expand from $1.3 billion in 2022 to $2.7 billion by 2028, driven by growth in telecom infrastructure, military, and satellite communications, the launch of these power amplifiers is timely. CEO Ryan Pratt noted the strong initial demand for these devices, underscoring their critical role in the advancement of next-generation RF systems.

The GRF0020D and GRF0030D are now available for order, starting at $30 for bulk purchases, and can be transported in specialized waffle trays ensuring their integrity. For organizations in need of high-performance RF components, these new products represent a significant advancement in technology and availability.

MWN-AI** Analysis

Guerrilla RF's recent introduction of the GRF0020D and GRF0030D gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMT) marks a significant advancement in RF technology. With capabilities of up to 50W of power, these devices are engineered to meet the increasing demands of high-performance applications in wireless infrastructure, military, aerospace, and industrial heating sectors. Their flexibility to operate on both 50V and 28V supply rails while covering a wide operational bandwidth enhances adaptability, making them attractive for integration into custom monolithic microwave integrated circuits (MMICs).

Market research suggests that the RF GaN market is poised for robust growth, doubling from $1.3 billion in 2022 to an anticipated $2.7 billion by 2028. Key drivers include the expansion of telecom infrastructure—including 5G technologies—military applications, and satellite communications, each expected to grow at compound annual growth rates of 10%, 13%, and 18%, respectively. Guerrilla RF's products align well with this upward trajectory, particularly as GaN on SiC technology is projected to dominate the market over the next decade.

Investors should be optimistic about Guerrilla RF's positioning within this growing landscape. The company's emphasis on domestic production aligns with governmental initiatives like the CHIPS Act, which aims to bolster domestic chip production, presenting a competitive advantage. Given the strategic significance of GaN technology in energy-efficient RF systems, the demand for these new products, evidenced by positive CEO commentary, suggests a strong market reception.

In conclusion, investors might consider a bullish outlook on Guerrilla RF (OTCQX: GUER) as they navigate a market ripe for innovation and expansion, particularly within critical growth segments. Close monitoring of product uptake and market trends will be essential to fully capitalize on this opportunity.

**MWN-AI Summary and Analysis is based on asking OpenAI to summarize and analyze this news release.

Source: Business Wire

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D , the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. These unmatched discrete transistors provide up to 50W of saturated power for customers within the wireless infrastructure, military, aerospace and industrial heating markets who are looking to integrate bare die within their own custom MMICs.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20250116273782/en/

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. (Graphic: Business Wire)

Each device offers exceptional flexibility, supporting either 50V or 28V supply rails while covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation schemes. When using a 50V rail, the GRF0030D is rated for 50W (P SAT ) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power. Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This slightly lower power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. As with all of Guerrilla RF’s bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) compliance.

According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 to $2.7B by 2028. This growth is driven by expansion in key segments relevant to Guerrilla RF, including telecom infrastructure (5G and point-to-point systems), military, and satellite communications, with projected compound annual growth rates of 10%, 13%, and 18%, respectively. Additionally, GaN on SiC variants are expected to dominate the market for the next decade.

Ryan Pratt, CEO and founder of Guerrilla RF, commented, “GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D .” He added, “Another advantage is that these devices are fabricated in the U.S., aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers.”

Product Availability

The GRF0020D and GRF0030D are now available for ordering, with samples ready for distribution. Pricing starts at $30 for 100-piece quantities. The bare dice are shipped in 2x2-inch waffle trays for safe transport and storage. Visit https://www.guerrilla-rf.com/products/detail/sku/0020D and https://www.guerrilla-rf.com/products/detail/sku/0030D for additional details pertaining to these two devices. To learn more about Guerrilla RF’s complete GaN portfolio, please visit www.guerrilla-rf.com/GaN .

About Guerrilla RF, Inc.

Founded in 2013, Guerrilla RF, Inc., develops and manufactures high-performance, state-of-the-art radio frequency (RF) and microwave semiconductors for wireless OEMs in multiple high-growth market segments, including network infrastructure for 5G/4G macro and small cell base stations, SATCOM, cellular repeaters/DAS, automotive telematics, military communications, navigation, and high-fidelity wireless audio. The Company has an extensive portfolio of 100+ high-performance RF and microwave semiconductor devices with 50+ new products in development. As one of the fastest-growing semiconductor firms in the industry, Guerrilla RF drives innovation through its R&D to commercialization initiatives and focuses on product excellence and custom solutions to underserved markets. The Company has shipped over 200 million devices and has repeatedly been included in Inc. Magazine’s annual "Inc. 5000" list. Guerrilla RF has made the top "Inc. 500" list for two years in a row. For more information, please visit https://guerrilla-rf.com or follow the Company on LinkedIn .

Forward-Looking Statements

This press release may contain forward-looking statements within the meaning of Section 21E of the Securities Exchange Act of 1934 and the Private Securities Litigation Reform Act of 1995, which statements are inherently subject to risks and uncertainties. Forward-looking statements include projections, predictions, expectations, or beliefs about future events or results or otherwise are not statements of historical fact. Such statements are often characterized by the use of qualifying words (and their derivatives) such as “expect,” “believe,” “estimate,” “plan,” “project,” “anticipate,” or other statements concerning opinions or judgments of the Company and its management about future events. You should not place undue reliance on forward-looking statements because they involve known and unknown risks, uncertainties, and assumptions that are difficult or impossible to predict and, in some cases, beyond the Company’s control. Actual results may differ materially from those in the forward-looking statements as a result of several factors, including those described in the Company’s filings with the SEC available at www.sec.gov . Forward-looking statements speak only as of the date they are made. The Company undertakes no obligation to revise or update information in this release to reflect events or circumstances in the future, even if new information becomes available.

View source version on businesswire.com: https://www.businesswire.com/news/home/20250116273782/en/

Jim Ahne, Senior Vice President of Marketing
jahne@guerrilla-rf.com
+1 336 265 7760

FAQ**

What specific applications within the military and aerospace sectors could benefit most from the new GRF0020D and GRF0030D devices by Guerrilla RF GUER?

The GRF0020D and GRF0030D devices by Guerrilla RF could significantly enhance applications in military communication systems, radar technology, satellite communication, electronic warfare, and avionics by improving signal integrity and efficiency in high-frequency operations.

How does the pricing strategy for the GRF0020D and GRF0030D compare to competitors in the GaN on SiC HEMT market, and what impact might this have on Guerrilla RF GUER's market share?

Guerrilla RF's pricing strategy for the GRF0020D and GRF0030D, if positioned competitively against rivals in the GaN on SiC HEMT market, could enhance its market share by attracting cost-sensitive customers while maintaining perceived value and performance benefits.

Given the projected growth of the RF GaN device market to $2.7B by 2028, how does Guerrilla RF GUER plan to leverage this trend to enhance its R&D initiatives and product offerings?

Guerrilla RF plans to leverage the projected $2.7B growth in the RF GaN device market by enhancing its R&D initiatives to develop innovative products that meet emerging market demands while capitalizing on advancements in technology and design capabilities.

Can you elaborate on the advantages of domestic manufacturing for Guerrilla RF GUER concerning supply chain robustness and compliance with the CHIPS Act objectives?

Domestic manufacturing for Guerrilla RF (GUER) enhances supply chain robustness by reducing dependence on overseas production, leading to improved reliability and responsiveness, while also aligning with the CHIPS Act objectives that promote local semiconductor production and innovation.

**MWN-AI FAQ is based on asking OpenAI questions about Guerrilla RF (OTC: GUER).

Guerrilla RF

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November 12, 2025 08:00:00 am
Guerrilla RF Reports Third Quarter 2025 Results

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