Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation
MWN-AI** Summary
Navitas Semiconductor, a leader in power semiconductors utilizing GaN (gallium nitride) and SiC (silicon carbide) technologies, partnered with the École Polytechnique Fédérale de Lausanne (EPFL) to showcase a cutting-edge Solid-State Transformer (SST) solution at APEC 2026 held in San Antonio, Texas. This innovative platform, developed by EPFL's Power Electronics Laboratory, aims to optimize the power architecture of next-generation data centers by replacing traditional bulky transformers with a more efficient and modular SST system.
The SST being demonstrated converts 3.3 kV AC into 800 V DC and delivers a substantial 250 kW of power. The architecture employs a single-stage, modularized bridge rectifier topology, enhancing performance and efficiency. Central to this innovation are Navitas' GeneSiC™ ultra-high voltage 3300V and high voltage 1200V SiC MOSFETs, which facilitate improved power conversion. According to Paul Wheeler, VP & GM of Navitas' SiC business unit, the collaboration directly addresses the energy and thermal challenges faced by modern AI data centers.
The SST not only delivers high efficiency but also provides a flexible and galvanically isolated interface between the medium-voltage AC grid and the optimized architecture of an 800 V DC data center. This project serves as part of EPFL's 'HeatingBits' initiative, which aims to implement the latest advancements in real-world data center environments.
APEC 2026 attendees can engage with representatives from both Navitas and EPFL at booth #2027 for more insights on this groundbreaking technology. With a focus on next-generation power conversion, Navitas continues to lead the industry, boasting over 300 patents and a commitment to sustainable practices as a CarbonNeutral®-certified company.
MWN-AI** Analysis
As a financial analyst evaluating Navitas Semiconductor (NASDAQ: NVTS) in light of its recent collaboration with École Polytechnique Fédérale de Lausanne (EPFL) on the Solid-State Transformer (SST) for AI data centers, investors should consider several promising aspects.
Navitas is positioned at the forefront of the semiconductor sector, specifically in gallium nitride (GaN) and silicon carbide (SiC) technologies, which are increasingly crucial for the energy efficiency demands of modern data centers. The partnership with EPFL showcases its commitment to innovation, as the 250kW SST solution could dramatically improve power distribution efficiency by allowing the transition from bulky transformers to a more modular and scalable 800V DC framework. This technological advancement aligns with the growing push towards renewable energy and energy-efficient infrastructures, which is driving demand in various sectors, including AI and cloud computing.
Moreover, the performance enhancements promised by Navitas’ GeneSiC™ ultra-high voltage (UHV) 3300V and 1200V SiC devices indicate a competitive edge in terms of reliability and efficiency. Such attributes could position Navitas as a preferred choice for data centers looking to lower operational costs and enhance sustainability efforts.
From an investment perspective, Navitas presents an intriguing opportunity. The company's involvement in high-growth sectors—AI, data centers, and energy transition—poised for expansion, along with its strong research affiliations, could drive significant revenue growth.
However, potential investors should remain cautious of market volatility, regulatory changes, and technological shifts in the semiconductor industry. Conducting a thorough risk assessment and monitoring ongoing developments within the sector will be essential. Given these factors, maintaining a watchful eye on Navitas' performance could yield promising investment results in the medium to long term.
**MWN-AI Summary and Analysis is based on asking OpenAI to summarize and analyze this news release.
TORRANCE, Calif. and LAUSANNE, Switzerland, March 04, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at APEC 2026 in San Antonio Texas.
The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency. EPFL design uses single stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250 kW power and delivers enhanced performance and modularity. This is built using Navitas GeneSiC™ ultra-high voltage (UHV) 3300V and high voltage (HV) 1200V Silicon Carbide (SiC) Trench-Assisted Planar™ (TAP) MOSFETs and modules. The SST demonstrator is developed as part of the Power Electronics Laboratory’s project HeatingBits, aiming to deploy and showcase the latest technologies inside the EPFL’s actual data center.
“This engagement with EPFL demonstrates how next-generation medium-voltage power conversion can directly address the growing energy and thermal challenges inside AI data centers,” said Paul Wheeler, VP & GM of the SiC business unit at Navitas. “By combining our 3300V and 1200V GeneSiC™ MOSFETs and modules with a novel single-stage solid-state transformer architecture and advanced real-time control, we are enabling a scalable 800 V-DC distribution approach that delivers higher efficiency from the grid to the rack while creating new opportunities for heat reuse.”
“This novel solid-state transformer platform provides a galvanically isolated, flexible, scalable, and efficient interface between the medium-voltage AC grid and an 800 V-DC data center architecture, while serving as a real-world experimental environment for advanced distributed control,” said Drazen Dujic, Associate Professor and Director of the Power Electronics Laboratory at EPFL. “By leveraging Navitas UHV and HV SiC MOSFETs portfolio, EPFL was able to optimize system performance for the highest efficiency and optimal design margins for system robustness and reliability."
APEC takes place from 22-26 March in San Antonio, TX. Representatives from both Navitas and the EPFL’s Power Electronics Laboratory will be available for further information at the Navitas booth #2027. Navitas can also be reached by email at info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
About EPFL
The École Polytechnique Fédérale de Lausanne (EPFL) is a prestigious public research university in Switzerland, renowned for its excellence in science, technology, engineering, and mathematics (STEM) fields. It offers education at Bachelor’s, Master’s, and Doctoral levels and is home to more than 500 laboratories, with students, professors, and collaborators of more than 120 nationalities. Located on the shores of Lake Geneva, it is a vibrant, cosmopolitan institution that consistently ranks among the top universities in the world. EPFL collaborates with an important network of partners, including other universities and colleges, secondary schools and gymnasiums, industry and the economy, political circles, and the general public, with the aim of having a real impact on society.
Navitas Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com
Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com
EPFL Contact Information
Prof. Drazen Dujic
Power Electronics Laboratory, EPFL
drazen.dujic@epfl.ch
Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and EPFL and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and EPFL, and forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. These and other risk factors are discussed in the Risk Factors section of our respective annual reports on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents each of us may file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/f0162c8d-e943-4595-b3a3-9e7877fe9c38
FAQ**
How does the collaboration between Navitas Semiconductor Corporation NVTS and EPFL impact the development of next-generation power solutions for data centers in Torrance, California, and Lausanne, Switzerland?
What specific advancements in efficiency and performance are being demonstrated through the Solid-State Transformer (SST) solution by Navitas Semiconductor Corporation NVTS at APEC 20in Texas?
What role does the Power Electronics Laboratory at EPFL play in enhancing the sustainability and functionality of data centers, particularly in light of Navitas Semiconductor Corporation NVTS’s innovations?
How are the technologies showcased by Navitas Semiconductor Corporation NVTS at the APEC 2026 conference expected to influence future energy management strategies in data centers located in both Torrance and Lausanne?
**MWN-AI FAQ is based on asking OpenAI questions about Navitas Semiconductor Corporation (NASDAQ: NVTS).
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