Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026
MWN-AI** Summary
Navitas Semiconductor (NASDAQ: NVTS), a leader in gallium nitride (GaN) and silicon carbide (SiC) technologies, is set to showcase its latest innovations at APEC 2026 from March 22-26 in San Antonio, Texas. The company will present a range of industry-leading power semiconductor solutions aimed at optimizing AI data centers, performance computing, energy infrastructure, and industrial electrification.
Among the highlights is the unveiling of their groundbreaking 10 kW ‘GaN-powered’ 800 V-to-50 V DC-DC platform. Utilizing advanced 650 V and 100 V GaNFast FETs, the platform achieves a remarkable 98.5% efficiency and offers a power density of 2.1 kW/in³, accommodating the ±400 VDC standard vital for AI applications. Additionally, Navitas will introduce a 12 kW AI data center power supply with IntelliWeave™ digital control that enhances efficiency and power density.
In line with next-generation solid-state transformer applications, Navitas will feature SiCPAK™ power modules with ultra-high-voltage capacities, ensuring over 98% efficiency in converting medium-voltage outputs (from 13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC. Their innovative gate driver evaluation board for UHV SiCPAK modules will also be displayed.
Navitas will conduct three key speaking sessions during the event, covering topics such as reliability in SiC technologies and the capabilities of GaN ICs in AI data center applications. As a trailblazer in power semiconductor technologies, Navitas continues to push boundaries with its more than 300 patents and commitment to sustainable practices, being the first CarbonNeutral®-certified semiconductor company. As the demand for efficiency and reliability in power solutions grows, Navitas positions itself as a pivotal player in shaping the future of energy and computing.
MWN-AI** Analysis
As Navitas Semiconductor (Nasdaq: NVTS) gears up for APEC 2026 in San Antonio, Texas, it is positioning itself at the forefront of the rapidly evolving power semiconductor landscape. The company's showcase, particularly in advanced GaN and SiC technologies, signals robust growth potential, particularly in high-demand sectors such as AI data centers, performance computing, and energy infrastructure.
Investors should consider the following aspects before making decisions regarding Navitas stock. Firstly, the innovations being unveiled—including the 10kW GaN-powered brick and ultra-high-voltage SiCPAK™ modules—demonstrate a commitment to efficiency and power density that may satisfy rising industry demands for cleaner and more reliable energy solutions. With energy transformation and AI's increasing deployment across industries, companies like Navitas are poised to benefit significantly.
The sessions on reliability and performance characteristics of SiC and GaN technologies at APEC will further enhance the company's credibility and visibility. These discussions highlight not only current capabilities but also future prospects, addressing investor concerns around performance and reliability in mission-critical applications.
From a financial perspective, Navitas’s sustained focus on innovation—evident from its substantial patent portfolio and CarbonNeutral® certification—suggests a forward-thinking strategy that could lead to steady revenue growth. However, potential investors should remain mindful of the inherent operational risks and market dynamics, particularly in high-voltage markets.
In conclusion, while Navitas Semiconductor appears well-positioned for growth through its strategic innovations showcased at APEC 2026, investors should weigh its opportunities against the backdrop of industry volatility and competitive pressures. Continuous monitoring of product performance post-launch will be key in assessing the company’s trajectory in the burgeoning power semiconductor market.
**MWN-AI Summary and Analysis is based on asking OpenAI to summarize and analyze this news release.
- Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.
- Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs.
TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will exhibit its latest innovations for AI data centers, performance computing, energy and grid infrastructure, and industrial electrification at APEC 2026 (booth #2027) in San Antonio, Texas from March 22-26.
At the event, Navitas will unveil the 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform that employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and also supports + / - 400 VDC standard for AI datacenters. Additionally, Navitas will feature a 12 kW AI data center power supply, which leverages IntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance, along with an 8.5 kW OCP power supply and 4.5 kW CRPS power supply.
For next-generation solid-state transformer (SST) applications demanding industry-leading efficiency—exceeding 98% conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC for AI data centers and advanced energy infrastructure—Navitas will showcase its latest SiCPAK™ power modules. The portfolio features ultra-high-voltage (UHV) 3300 V and 2300 V solutions, along with 1200 V high-voltage options, delivering breakthrough performance, scalability, and reliability for mission-critical power systems. The newly released gate driver evaluation board for dynamic characterization of UHV SiCPAK™ power modules will also be on display.
Advancing the future of AI-enabled high-performance computing, Navitas will debut ultra-compact 240W and 300W power solutions built on its latest GaNFast™ IC innovations for superior efficiency and power density. Navitas will also showcase high-efficiency GaN-based motor control solutions ranging from 400W to 1kW for advanced industrial applications.
Navitas Speaking Sessions at APEC 2026
March 24 | 8:55–9:20 AM CT | Location: IS01.2
Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications
Presenter: Sumit Jadav, Navitas Semiconductor
March 25 | 11:05–11:30 AM CT| Location: IS07.6
High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit
March 26 | 11:35–11:50 AM CT | Location: IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit
Visit us at our booth #2027. For further information on the Navitas APEC 2026 presence, please visit our event page.
To schedule a meeting with Navitas at APEC 2026, please contact your Navitas representative or write to info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com
Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com
Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/f951a301-6e16-42e2-a877-20fa00052d52
FAQ**
How do the latest GaNFast™ and GeneSiC™ technologies from Navitas Semiconductor Corporation NVTS contribute to achieving higher power density and efficiency in AI data center solutions?
What specific advancements in the SiC and GaN ICs showcased by Navitas Semiconductor Corporation NVTS during APEC 20address reliability concerns for mission-critical energy infrastructure applications?
Can you explain how the 10 kW ‘GaN-powered’ DC-DC platform from Navitas Semiconductor Corporation NVTS optimizes performance and efficiency for AI data centers utilizing their 650V and 100V GaNFast FETs?
What potential benefits do the newly released SiCPAK™ power modules from Navitas Semiconductor Corporation NVTS offer for scalability and performance in advanced energy infrastructure applications?
**MWN-AI FAQ is based on asking OpenAI questions about Navitas Semiconductor Corporation (NASDAQ: NVTS).
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